DPG Phi
Verhandlungen
Verhandlungen
DPG

Berlin 2015 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 41: Semiconductor substrates: structure, epitaxy and growth (joint session with O)

DS 41.5: Vortrag

Freitag, 20. März 2015, 11:30–11:45, MA 042

Nanoscale Structure of Si/SiO2/Organics Interfaces — •Hans-Georg Steinrück1, Andreas Schiener1, Torben Schindler1, Johannes Will1, Andreas Magerl1, Oleg Konovalov2, Giovanni Li Destri2, Oliver H. Seeck3, Markus Mezger4, Julia Haddad5, Moshe Deutsch5, Antonio Checco6, and Benjamin M. Ocko61FAU, Germany — 2ESRF, France — 3DESY, Germany — 4MPI Mainz, Germany — 5Bar-Ilan University, Israel — 6BNL, USA

Single-crystal silicon is by far the most widely used substrate for the deposition of organic thin films. It’s surface is invariably terminated by a few nanometer-thick amorphous native SiO2 layer. The structure of the transition layer between the silicon and it’s oxide is neither well characterized nor well understood at present.

Using high-resolution x-ray reflectivity measurements of increasingly more complex interfaces involving silicon (001) substrates, we reveal the existence of a low-density, few-angstrom-thick, transition layer at the Si/SiO2 interface [1]. The importance of accounting for this layer in modeling silicon/liquid interfaces and silicon-supported monolayers is demonstrated by comparing fits of reflectivity curves by models including this layer and the widely used Tidswell model [2], which excludes this layer. The 6-8 missing electrons per silicon unit cell area found here support previous theoretical models and simulations of the Si/SiO2 interface [3].

[1] H.-G. Steinrück et al., ACS Nano (2014), DOI: 10.1021/nn5056223.

[2] I. M. Tidswell et al., Phys. Rev. B 41, 1111 (1990).

[3] Y. Tu and J. Tersoff, Phys. Rev. Lett. 84, 4393 (2000).

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2015 > Berlin