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Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 41: Semiconductor substrates: structure, epitaxy and growth (joint session with O)

Friday, March 20, 2015, 10:30–12:45, MA 042

10:30 DS 41.1 Surface and step conductivities at Si(111)-(7×7) surfaces investigated by multi-tip STM — •Sven Just, Marcus Blab, Stefan Korte, Vasily Cherepanov, Helmut Soltner, and Bert Voigtländer
10:45 DS 41.2 Atomic structure of terbium-induced nanostructures on Si(111) — •Martin Franz, Jan Große, Robert Kohlhaas, and Mario Dähne
11:00 DS 41.3 Tailoring Si(100) substrate surfaces for GaP growth by Ga predeposition — •Michael Häberle, Benjamin Borkenhagen, Gerhard Lilienkamp, and Winfried Daum
11:15 DS 41.4 Calculated formation energies of charged defects at surfaces from the repeated-slab approach — •Christoph Freysoldt and Jörg Neugebauer
11:30 DS 41.5 Nanoscale Structure of Si/SiO2/Organics Interfaces — •Hans-Georg Steinrück, Andreas Schiener, Torben Schindler, Johannes Will, Andreas Magerl, Oleg Konovalov, Giovanni Li Destri, Oliver H. Seeck, Markus Mezger, Julia Haddad, Moshe Deutsch, Antonio Checco, and Benjamin M. Ocko
11:45 DS 41.6 Comparative study of Co and Ni germanides growth on Ge(001) substrates — •Tomasz Grzela, Wojciech Koczorowski, Giovanni Capellini, Ryszard Czajka, Neil Curson, and Thomas Schroeder
12:00 DS 41.7 Investigation of the surface termination of BiTeI by combined STM/AFM — •Julian Berwanger, Florian Pielmeier, and Franz J. Giessibl
12:15 DS 41.8 Morphology of ultra-thin ZnO on Ag(111) — •Bjoern Bieniek, Patrick Rinke, Takashi Kumagai, Shamil Shaikhutdinov, Bo Hong Liu, and Matthias Scheffler
12:30 DS 41.9 Adding 3D to conventional SEM or FIB surface imaging information - In situ Surface Sensing and Nanoprofilometry for Focused Electron and Ion Beam Induced Processes Verification — •Frank Nouvertne, Axel Rudzinski, Torsten Michael, Marc Levermann, and Eva Maynicke
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