Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 100: ZnO and its relatives
HL 100.9: Vortrag
Freitag, 20. März 2015, 11:45–12:00, EW 203
Effects of the growth temperature on the properties of RF sputtered Zn1−xMgxO:Al thin films — •Philipp Schurig1, Benedikt Kramm1, Shengqiang Zhou2, Angelika Polity1, and Bruno K. Meyer1 — 11. Physikalisches Insitut, Justus-Liebig-Universität Giessen, Deutschland — 2Functional Materials, Helmholtz-Zentrum Dresden-Rossendorf, Germany
Transparent conductive materials (TCMs) are of major interest for optoelectronic or photovoltaic applications, i.e. ZnMgO:Al can be used as a window layer material or transparent electrode in solar cell applications. ZnMgO:Al can be tuned by variation of the magnesium content concerning the band gap or electrical properties, respectively. The thin films were deposited by RF sputtering on c sapphire and soda lime glass substrates. A ceramic ZnMgO:Al target was used as sputtering source.
The influence of the growth temperature on the structural, optical and electrical properties is investigated using various methods, e.g. XRD, SEM, XPS, UV-Vis NIR and Hall measurements. With increasing growth temperature the structure of the films changes from wurzite (low temp.) to rock salt-phase (high temp.), whereas the wurzite phase was the main interest in this research. With higher temperatures the ZnO (0 0 2) diffraction peak shifts to higher angles which indicates a higher magnesium content. The band gap also shifts to higher values, from 3.9 to 4.1 eV. The growth temperature influence on the electrical properties couldn’t be determined, because other aspects do influence these as well, e.g. the grain size or the Mg content, respectively.