Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 106: Transport, magnetotransport and quantum Hall physics
HL 106.8: Vortrag
Freitag, 20. März 2015, 12:00–12:15, EW 202
Electrical and THz magnetospectroscopy studies of InAs-based micro- and nanostructures — •Olivio Chiatti1, Sven S. Buchholz1, Christian Heyn2, Wolfgang Hansen2, Mehdi Pakmehr3, Bruce D. McCombe3, and Saskia F. Fischer1 — 1Neue Materialien, Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany — 2Institut für Angewandte Physik, Universität Hamburg, 20148 Hamburg, Germany — 3Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY 14260, USA
Nanostructures in narrow-gap semiconductors with strong spin-orbit interaction (SOI) offer the possibility to electrically manipulate spin-polarized currents. We present magnetotransport and THz magnetospectroscopy studies of Hall-bars from an InGaAs/InAlAs quantum well with an InAs-inserted channel. The two-dimensional electron gas is at 53 nm depth and has a carrier density of about 6·1011 cm−2 and mobility of about 2·105 cm2/Vs. The measurements reveal an effective mass of 0.038m0 and an anisotropic g-factor of up to 20, larger than for bulk InAs. We demonstrate that quasi-one-dimensional channels (Q1D) can be successfully formed by micro-laser lithography and that the subband population is controlled by in-plane gates. Contrary to previous reports, asymmetric in-plane gate voltages applied to Q1D channels did not show signs of SOI-induced conductance anomalies [1].
[1] Chiatti et al., arXiv:1410.8588v2 [cond-mat.mes-hall] (2014).