Berlin 2015 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 20: Poster IA (Ultrafast phenomena; Optical properties; Transport; Theory)
HL 20.6: Poster
Montag, 16. März 2015, 15:00–20:00, Poster B
Surface plasmons at semiconductor/dielectric interfaces — •Dalibor Blažek1,2, Michael Čada2,1, and Jaromír Pištora1 — 1Nanotechnology Centre, VŠB - Technical University of Ostrava, 17. listopadu 15, Ostrava - Poruba, Czech republic — 2Department of Electrical and Computer Engineering, Dalhousie University, Halifax, NS B3H 4R2, Canada
Plasmonic structures are a promising solution for developing novel integrated optics devices. While metals have shown to support plasmon oscillations at optical frequencies, heavily doped semiconductors may support surface plasmons (SP) at infrared frequencies. In order to fully understand the resulting SP characteristics, one needs to investigate properties of the lattice permittivity, the plasma frequency, and the damping.While these material properties may be regarded as the material constants, the relevant SP properties are dispersive. Focusing on the SP of a chosen wavelength, its characteristics may be tuned by a semiconductors doping level. While a minimum dopant concentration is required to support a chosen SP, as the doping concentrations increase, the secondary effects, such as decreasing electron mobility and increasing effective mass, will significantly affect plasmon damping.
This contribution presents the influence of doping levels on the SP properties. The calculations are based on the Drude model using the real semiconductor properties. It is shown that the propagation length of the SP increases monotonically with increasing doping levels despite the extremely large damping.