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Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 3: Graphene: THz, NIR and transport properties (with O/TT)

HL 3.2: Vortrag

Montag, 16. März 2015, 09:45–10:00, ER 270

Mechanically Modulated Graphene for THz-Nanoelectronics. — •Jonas Sichau1, Timothy Lyon1, August Dorn1, Amaia Zurutuza2, Amaia Pesquera2, Alba Centeno2, and Robert Blick11Center for Hybrid Nanostructures, Institutes of Nanostructure and Solid State Physics, University of Hamburg, Jungiusstrasse 11c, 20355 Hamburg, Germany. — 2Graphenea S.A., 76 Tolosa Hiribidea, Donostia-San Sebastian, E-20018, Spain.

Graphene offers very high charge carrier mobility and a mean free path of several microns at room temperature. Consequently, it is a promising material for THz electronics [1]. For flat monolayer graphene, studies on microwave-photo excited transport have found spin resonance and zero-field pseudo-spin splitting [2]. The aim of our work is to investigate spatially modulated graphene under microwave excitation. Once carriers are propagating ballistically through the undulated graphene sheet, it is predicted that THz-radiation should be emitted [1].

We fabricated extremely large graphene membranes of up to 1 mm side lengths and transferred these onto a SiO2-substrate. The pitch and height of the mechanical modulation are of the order of 200 nm and 50 nm, respectively. The measurements are performed with a variable temperature insert (VTI) at magnetic fields up to 12T. The microwave signal is coupled to the sample via a micro inductor forming a resonator with the graphene sheet. With this configuration we are able to probe magnetotransport and the interaction with electromagnetic radiation.

[1] Tantiwanichapan et al., Nanotechnology 24, 375205 (2013)

[2] Mani, R.G. et al., Nat. Commun., 3:996 (2012)

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