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HL: Fachverband Halbleiterphysik
HL 30: Photovoltaics: Nanostructured materials
HL 30.5: Talk
Tuesday, March 17, 2015, 11:15–11:30, ER 164
Black Silicon Prepared by Maskless Plasma Etching at High Temperatures Above 0 °C for PV Applications — •Maria Gaudig1,2, Jens Hirsch1,3, Johannes Ziegler2, Thomas Schneider2, Martina Werner3, Alexander Sprafke2, Norbert Bernhard1,3, and Ralf Wehrspohn3,4 — 1Anhalt University of Applied Sciences, Technologies of Photovoltaics Group, Bernburger Str. 55, 06366 Köthen — 2Martin Luther University Halle-Wittenberg, Institute of Physics, Group microMD, Heinrich-Damerow-Str. 4, 06120 Halle (Saale) — 3Fraunhofer Center for Silicon Photovoltaics, Otto-Eißfeldt-Straße 12, 06120 Halle (Saale) — 4Fraunhofer Institute for Mechanics of Materials, Walter-Hülse-Str. 1, 06120 Halle (Saale)
In this work, black silicon prepared by plasma etching at temperatures above 0 °C is demonstrated. The microtexturing is realised with a maskless dry plasma etch process with capacitive and additionally inductive plasma generation. Randomly distributed, parabolic shaped pits are created on the surface with dimensions in the micrometer range and an aspect ratio of the averaged vertical against the lateral dimension of about 2:1. After passivation of the textured samples with a thin aluminium oxide layer deposited by thermal atomic layer deposition, effective charge carrier lifetimes above 1 ms could be reached. Additionally, the absorption, weighted on the AM1.5g spectrum from 300-1150 nm, is slightly increased with the aluminium oxide layer to values about 95 %. In conclusion, a black silicon process at etch temperatures above 0 °C is introduced which could be an option for photovoltaic applications.