Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 35: Semiconductor laser

HL 35.2: Vortrag

Dienstag, 17. März 2015, 11:30–11:45, EW 203

High UV-Power by a frequency doubled AlGaInP-VECSEL — •Stefan Baumgärtner, Hermann Kahle, Roman Bek, Thomas Schwarzbäck, Michael Jetter, and Peter Michler — Universität Stuttgart, Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, Allmandring 3, 70569 Stuttgart

We present a frequency-doubled, optically pumped vertical-external-cavity surface-emitting laser (VECSEL), exceeding continuous-wave output power of 400 mW in the ultraviolet spectral region at 332 nm which is a huge improvement to earlier publications [1]. The VECSEL structure was grown by metal-organic vapor-phase epitaxy with an inhomogeneous quantum well (QW) distribution optimized due to the absorption of the pump laser [2].
The ultraviolet light was generated in a v-shaped cavity by intra-cavity frequency-doubling using β-Bariumborate as a nonlinear crystal. Using a birefringent filter inside the cavity the emission wavelength can be tuned totally 14.9 nm in the ultraviolet spectral region. Also power transfer measurements were performed with a maximum output power of 429 mW at 332 nm. The intensity of the second harmonic beam can be simulated with the theory of Boyd and Kleinman. Current work is focusing on the usage of other nonlinear crystals, namely Bismuthborate and Lithiumtriborate.

[1] Kahle, Bek, et al. J. of appl. Phys. Ex., 7, 092705, (2014) [2] Baumgärtner, Kahle, et al. J. of Crystal Growth, DOI: 10.1016/j.jcrysgro.2014.10.016