Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 39: Posters II (Topological insulators; Graphene; Spintronics and spin physics; Quantum information science)
HL 39.21: Poster
Dienstag, 17. März 2015, 14:00–20:00, Poster F
Strain-controlled magnetically doped III-V semiconductors — •Stefan Stagraczyński1, Czesław Jasiukiewicz2, Vitalii Dugaev2, and Jamal Berakdar1 — 1Institute für Physik, Martin-Luther-Universität Halle-Wittenberg, 06120 Halle(Saale), Germany — 2Department of Physics, University of Technology, 35-959 Rzeszów, Poland
We investigate the 6-band Kane model for the valence band structure of III-V magnetic semiconductors, motivated by finding a general way to effectively control magnetic properties which are strongly coupled with elastic properties. In particular, we map out how uni/bi-axial strain can be used to tune the system. We analyze the complex dependence of total energy on the applied magnetization and compressive/tensile strain under selected hole concentrations and explain the effects of magnetic anisotropy in semiconductors. As an example, we have chosen the GaMnAs semiconductors system. Applying strain the has a strong impact on the total energy and can increase the magnetic anisotropy substantially. Further, we find the dependency of the total energy on the hole concentration in the presence of strain, magnetization and its direction. The results show symmetry properties, the importance of strain and magnetization in the semiconductors system.