Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 42: Devices
HL 42.9: Vortrag
Mittwoch, 18. März 2015, 11:45–12:00, EW 015
25 Gb/s phase modulation with 1.3 µm semiconductor optical amplifiers based on InAs quantum dots — •Anissa Zeghuzi1, Holger Schmeckebier1, Mirko Stubenrauch1, Christian Meuer2, Christian-Alexander Bunge3, and Dieter Bimberg1 — 1Technische Universität Berlin — 2Fraunhofer Heinrich-Hertz-Institut Berlin — 3Hochschule für Telekommunikation Leipzig
The number of components and thus costs in optical networks, e.g. in PON, can be significantly reduced by merging modulators and amplifiers. Since the real and the complex part of the susceptibility are decoupled in QD devices, the phase can be changed individually. The phase modulation is realized by means of the direct modulation induced change of current density, resulting in a change of effective refractive index of the ridge waveguide. The SOAs are driven in the QD ground state saturation regime with a high suppression of amplitude modulation. Therefore no patterning occurs in contrast to on-off- keying modulation scheme. Thus amplitude modulation was limited to 6 Gb/s, but phase modulation up to 25 Gb/s is demonstrated without any additional electrical pre- or post-processing (BER < 10−9). Furthermore modulation of 20 Gb/s bit rate is achieved at a small cw input power of only - 11 dBm.