Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 44: Quantum dots: Preparation and characterization
HL 44.7: Vortrag
Mittwoch, 18. März 2015, 11:00–11:15, EW 203
Deep-Level Transient Spectroscopy on In0.5Ga0.5As/GaP quantum dots with AlP barrier — •Leo Bonato1, Elisa Sala1, Gernot Stracke1, Tobias Nowozin1, André Strittmatter1, and Dieter Bimberg1,2 — 1Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623 Berlin — 2King Abdulaziz University, Jeddah, Saudi Arabia
Aiming to use self-assembled quantum dots (QDs) as storage units for novel memory devices [1], we studied the charge-carrier dynamics during the processes of charging and discharging QDs by using Deep-Level Transient Spectroscopy (DLTS). We investigated In0.5Ga0.5As QDs grown on a GaAs interlayer in GaP, with an additional AlP barrier, which yielded a localization energy of 1.14 eV and a storage time at room temperature of 230 s. This marks a definite improvement over the previous record values of 0.8 eV [2] and 1.6 s [1].
[1] A. Marent et al., The QD-Flash: a quantum dot-based memory device, Semicond. Sci. Technol. 26 (2011) 014026
[2] T. Nowozin et al., 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots, Appl. Phys. Lett. 102 (2013) 052115