Berlin 2015 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 57: Optical properties of bulk semiconductors

HL 57.6: Vortrag

Mittwoch, 18. März 2015, 17:30–17:45, EW 015

Microscopic Calculations of the Optical Properties of Novel Bismide and Nitride Containing III-V Semiconductors — •Phillip Springer¹, Phil Rosenow¹, Ralf Tonner², Jörg Hader³, Jerome Moloney³, Tineke Stroucken⁴, and Stephan W. Koch⁴ — ¹Research Training Group GRK 1782, Philipps-Universität Marburg, 35032 Marburg, Germany — ²Department of Chemistry, Philipps-Universität Marburg, 35032 Marburg, Germany — ³NLCSTR Inc., Tucson, Arizona 85705, USA — ⁴Department of Physics, Philipps-Universität Marburg, 35032 Marburg, Germany

Using first-principles calculations to determine the single-particle properties of novel dilute Bismide or Nitride systems, we compute the absorption, gain and luminescence properties of such systems. We extract effective k · p parameters from DFT calculations which are then utilized to obtain the band structure as well as the optical and Coulomb matrix elements between the relevant valence and conduction bands using a Luttinger anti-crossing model. On this basis, we calculate the optical properties within the framework of the semiconductor Bloch and luminescence equations.