Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 58: OFETs, OLEDs, and organic optoelectronics
HL 58.8: Vortrag
Mittwoch, 18. März 2015, 18:15–18:30, EW 202
Anisotropic electron mobility studies on Cl2-NDI single crystals and the role of static and dynamic lattice deformations upon temperature variation — •N.H. Hansen1, F. May2, D. Kälblein2, T. Schmeiler1, C. Lennartz2, A. Steeger1, C. Burschka3, M. Stolte3, F. Würthner3, J. Brill2, and J. Pflaum1,4 — 1Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — 2InnovationLab GmbH, Speyerer Strasse 4, 69115 Heidelberg, Germany and BASF SE, 67056 Ludwigshafen, Germany — 3Institut für Organische Chemie and Center for Nanosystems Chemistry, Universität Würzburg, 97074 Würzburg, Germany — 4ZAE Bayern, 97074 Würzburg
Recently, high mobility air-stable electron semiconductors have been synthesized to fill one of the major technological gaps in an all-organic circuitry. One of the promising candidates with a thin-film mobility of up to 1.3 cm2/Vs at ambient conditions is Cl2-NDI (naphthalene diimide) [Stolte et. al., Proc. of SPIE, Vol. 7778, 777804, 2010]. Yet little is known about its elementary carrier transport mechanisms on a molecular level. To address this lack of information, we performed anisotropic field effect transistor measurements on Cl2-NDI single crystals and observe an increasing mobility at lower temperatures (1.5 cm2/Vs at 300 K, 2.8 cm2/Vs at 175 K), which hints at a band-like transport, as commonly assumed. However, as we will demonstrate the experimental data can be consistently described in the framework of a hopping-type model based on Levich-Jortner rates, which accounts for thermally induced lattice effects and electron-phonon interaction.