Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 61: Posters III (Organic-inorganic perovskite semiconductors; Organic photovoltaics and electronics; Photovoltaics; Energy science; New materials and concepts)
HL 61.29: Poster
Mittwoch, 18. März 2015, 15:00–20:00, Poster F
Influence of ZnO doping in ALD deposited Al2O3 on Qfix and charge carrier lifetime — •Johannes Ziegler1, Thomas Schneider1, Alexander N. Sprafke1, and Ralf B. Wehrspohn1,2 — 1Institute of Physics Martin Luther University Halle-Wittenberg — 2Fraunhofer Institute for Mechanics of Materials IWM Halle
Thin Al2O3 films deposited by thermal ALD on Si surfaces are known to provide an excellent passivation quality. Beside the chemical passivation of recombination active dangling bonds on the silicon surface by saturation, the field effect passivation generated by a high density of fixed negative charges in the Al2O3 is responsible for the reduction of parasitic charge carrier recombination in silicon solar cells [1]. In this work the influence of ZnO on the fixed negative charges in the Al2O3 layers and on their passivation quality on p-type silicon is studied by CV and QSSPC measurements.
[1] B.Hoex, J.Schmidt, R.Bock, P.P. Altermatt,M. C. M. van de Sanden and W. M. M. Kessels, Appl. Phys. Lett, 89:042112 (2006)