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Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 65: Focus Session (DS with HL): Oxide semiconductors I

Donnerstag, 19. März 2015, 09:30–12:45, H 2032

09:30 HL 65.1 Hauptvortrag: Growth, properties and devices of gallium-oxide-based widegap semiconductors — •Shizuo Fujuta
10:00 HL 65.2 Growth-Kinetics Study and Doping the Group-III Sesquioxide β-Ga2O3 — •Patrick Vogt and Oliver Bierwagen
10:15 HL 65.3 Au-Schottky contact on In2O3 single crystals — •Maryam Nazarzadehmoafi, Christoph Janowitz, Mattia Mulazzi, Stephan Machulik, Zbigniew Galazka, and Recardo Manzke
10:30 HL 65.4 Schottky contacts and pn-heterojunctions on heteroepitaxial In2O3 thin films grown by pulsed laser deposition — •Daniel Splith, Florian Schmidt, Steffen Lanzinger, Stefan Müller, Holger von Wenckstern, and Marius Grundmann
10:45 HL 65.5 Temperature-dependent thermal conductivity in Mg-doped and undoped β-Ga2O3 bulk-crystals — •Martin Handwerg, Rüdiger Mitdank, Zbigniew Galazka, and and Saskia F. Fischer
  11:00 30 min. break.
11:30 HL 65.6 Hauptvortrag: BaSnO3; The next generation of transparent conducting oxide? — •David Scanlon
12:00 HL 65.7 Nitrogen doping in tin dioxide thin film grown by chemical vapor deposition — •Jie Jiang, Yinmei Lu, Benedikt Kramm, and Bruno K Meyer
12:15 HL 65.8 Dopant clustering in p-type transparent semiconducting Cr2O3:Mg — •Karsten Fleischer, David Caffrey, Leo Farrell, Emma Norton, Daragh Mullarkey, Elisabetta Arca, and Igor V. Shvets
12:30 HL 65.9 Annealing effects on electrical properties of room-temperature deposited zinc oxynitride thin films — •Anna Reinhardt, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann
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