Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 76: Carbon nanotubes
HL 76.1: Vortrag
Donnerstag, 19. März 2015, 11:30–11:45, EW 015
Wafer-level fabrication and characterization of photosensitive CNT-FETs — •Laura Kasper1,2, Thomas Blaudeck1, Sascha Hermann1,3, and Stefan E. Schulz1,2,3 — 1Technische Universität Chemnitz, Zentrum für Mikrotechnologien, 09107 Chemnitz — 2Fraunhofer-Institut für Elektronische Nanosysteme (ENAS), 09126 Chemnitz, Germany — 3DFG Cluster of Excellence "Center for Advancing Electronics Dresden" (cfaed), Carbon Path, 09107 Chemnitz, Germany
We report on the wafer-level fabrication and a quantitative analysis of the light detection properties of carbon-nanotube field-effect transistor (CNT-FET) arrays. We determine parameter ranges for the optical and electrical properties for achieving relevant photocurrents (> 100 pA) and responsivities (~ 1 uA/W). Aside of the dynamic range of the sensor devices, the noise-equivalent power varies clearly with the applied source-drain voltages. Local intensity scans of the sensor response (source-drain current as a function of the locus of incidence) along the transistor channel reveal the fundamental Schottky behavior of the device related to the CNT-metal contacts. The results are reported for two batches of CNT-FETs varying the number of semiconducting CNTs as transistor channel. Especially the illumination of FETs with high-density CNT transistor channels show a smoothing of their transfer characteristics. Illumination of single-CNT channels shows signs of power dissipation. The influence of a CNT sidewalls functionalization with metal nanoparticles acting as light-sensitive floating gates is discussed as well.