Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 76: Carbon nanotubes
HL 76.3: Vortrag
Donnerstag, 19. März 2015, 12:00–12:15, EW 015
A wafer-level test platform for statistical TEM analysis of the structural properties of integrated carbon nanotubes — •Martin Hartmann1,2, Sascha Hermann1,2, Darius Pohl3, Bernd Relinghaus3, and Stefan E. Schulz1,2,4 — 1Center for Microtechnologies (ZFM), TU Chemnitz,Chemnitz, Germany — 2Center for Advancing Electronics Dresden (cfaed), TU Chemnitz, Chemnitz, Germany — 3Leibniz Institute for Solid State and Materials Research (IFW), Dresden, Germany — 4Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz, Germany
A carbon nanotube-based field-effect transistor (CNT-FET) is a promising building block in many electronic and sensor applications. However, the actual performance of those devices has not reached predicted values yet. This can be related to the high sensitivity of the nanomaterial to its environment as well as its structural and compositional configuration. Thus better methods for the investigation of nanomaterials under application-close conditions are required. We demonstrate an in-depth analysis of the FET channel structure by high-resolution transmission electron microscopy (HRTEM). Therefore, a special test platform was developed that facilitates electrical and transmission studies of integrated nanomaterials like CNTs. In this approach, special emphasis was laid on a wafer-level technology used for high-throughput FET fabrication enabling statistical studies. The concept as well as first investigations on exposed CNT-FET channel regions are going to be presented giving insights into chiral and elementary composition.