Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: Quantum dots: Optical properties
HL 9.6: Vortrag
Montag, 16. März 2015, 11:15–11:30, EW 203
Infrared transmission spectroscopy to measure intersublevel spacings in InAs self-assembled quantum dots — •Shovon Pal1,2, Sascha R. Valentin1, Nadezhda Kukharchyk1, Hanond Nong2, Alireza B. Parsa3, Gunther Eggeler3, Arne Ludwig1, Nathan Jukam2, and Andreas D. Wieck1 — 1Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Germany. — 2AG Terahertz Spektroskopie und Technologie, Ruhr-Universität Bochum, Germany. — 3Institut für Werkstoffe, Ruhr-Universität Bochum, Germany.
For over a decade, zero-dimensional semiconductor quantum dots have broadened the horizon of device applications from simple electronic memories to many optoelectronic devices like single photon emitter and photodetectors. The working principle of all these devices relies on the quantization resulting from confinement in such nanostructures. In this study, we employ Fourier transform infrared transmission spectroscopy to investigate the intersublevel spacings in the conduction band of self-assembled InAs quantum dots. Epitaxial, complementary-doped and semi-transparent electrostatic gates are grown on top of the sample within the ultra high vacuum conditions of the molecular beam epitaxy. These gates enable voltage tuning of the device with a better optical transmission [1].
[1] S. Pal et al., Infrared transmission spectroscopy of charge carriers in self-assembled InAs quantum dots under surface electric fields, J. Phys.: Condens. Matter 26 (2014) 505801.