Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 92: VCSELs, optical interconnects and Si photonics
HL 92.3: Vortrag
Donnerstag, 19. März 2015, 16:15–16:30, EW 202
Quantum well-pumped red AlGaInP VECSEL — Fabian Sauter1, •Stefan Baumgärtner1, Hermann Kahle1, Cherry May Mateo2, Roman Bek1, Uwe Brauch2, Michael Jetter1, and Peter Michler1 — 1Universität Stuttgart, Institut für Halbleiteroptik und Funktionelle Grenzflächen und Research Center SCoPE, Allmandring 3, 70569 Stuttgart — 2Universität Stuttgart, Institut für Strahlwerkezuge, Pfaffenwaldring 43, 70569 Stuttgart
Optically pumped semiconductor vertical-external-cavity surface-emitting lasers (OPS-VECSELs) provide the possibility of bandgap engineering in combination with the benefit of a near-diffraction-limited beam. By the use of AlGaInP material system, the emission wavelength in the red spectral range can easily adjusted around 640 nm to 680 nm depending on the material composition. Furthermore, the external cavity enables intra-cavity wavelength tuning, frequency doubling or mode locking. Previous AlGaInP OPS-VECSELs were pumped usually with green lasers at 532 nm to excite carriers in the barrier layers of the gain structure. The high quantum defect between the pump and the emission wavelength result in an elevated thermal input. In order to avoid degradation of the semiconductor structure and thermal rollover with increased pump power, we lower the quantum defect by carrier excitation in the quantum wells directly via pumping in the red spectral range. This causes challenges like low absorption efficiency and the lack of suitable pump sources. The present work is focusing on these challenges to achieve the quantum well-pumped VECSEL to a vest-pocket prototype.