Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 93: III-V semiconductors (other than nitrides)
HL 93.1: Vortrag
Donnerstag, 19. März 2015, 15:45–16:00, EW 203
Bond stretching force constants in (In,Ga)P — •Stefanie Eckner1, Martin Gnauck1, Andreas Johannes1, Tobias Steinbach1, Helena Kämmer1, Mark C. Ridgway2, and Claudia S. Schnohr1 — 1Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany — 2Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200, Australia
In order to exploit the full potential of mixed III-V-semiconductors for electronic and opto-electronic applications, a deeper understanding of their atomic scale structure and its relation to relevant properties such as the bandgap is necessary. The local atomic arrangement, which is crucial especially for strained thin films and nanostructures, strongly depends on the bond stretching force constants of the atomic pairs present in the material. In this study, (In,Ga)P grown by metal organic chemical vapour deposition was investigated using extended X-ray absorption fine structure spectroscopy. Measurements at the In- and Ga-K-edge were performed at ten different temperatures to determine the bond length variation as a function of temperature. As a result, bond stretching force constants of Ga-P- and In-P-bonds were determined in (In,Ga)P for varying indium content. These bond stretching force constants can be used in analyses of Raman spectra and in theoretical models of strained III-V thin films and nanostructures.