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14:00 |
HL 96.1 |
Use of In-Plane-Gate transistors for sensing of dielectrics — •Benjamin Gerd Feldern, Arne Ludwig, and Andreas Dirk Wieck
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14:00 |
HL 96.2 |
Fabrication of nanopattern arrays of gold dots for nanowire arrays on GaP substrates by electron-beam lithography — •Emad H. Hussein, Vanesa Hortelano, M. P. Semtsiv, and W. T. Masselink
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14:00 |
HL 96.3 |
Rabi Oscillations of Photon Echo in (In,Ga)As Quantum Dots — •Matthias Salewski, Lukas Langer, Sergey V. Poltavtsev, Irina A. Yugova, Dimitri R. Yakovlev, Christian Schneider, Martin Kamp, Ilya A. Akimov, and Manfred Bayer
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14:00 |
HL 96.4 |
Optical properties of Bi-containing nanostructures on GaAs — •Julian Veletas, Nils Rosemann, Lukas Nattermann, Kerstin Volz, and Sangam Chatterjee
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14:00 |
HL 96.5 |
Increase of efficiency of photoelectric transformers of solar concentrated energy on the basis of III-V semiconductor compounds — •Ia Trapaidze, Rafael Chikovani, Gela Goderdzishvili, Temur Khachidze, and Lia Trapaidze
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14:00 |
HL 96.6 |
Optical properties of GaN and InGaN/GaN microrods — •Christian Tessarek, George Sarau, Martin Heilmann, Robert Röder, Carsten Ronning, and Silke Christiansen
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14:00 |
HL 96.7 |
Oxygen and hydrogen profiles and electrical properties of unintentionally doped n-GaN grown by HVPE — •Valentin Garbe, Barbara Abendroth, Hartmut Stöcker, Arkadi Gavrilov, Doron Cohen-Elias, Shlomo Mehari, Dan Ritter, and Dirk C. Meyer
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14:00 |
HL 96.8 |
Optical investigations on the effect of hydrogen on the internal quantum efficiency of GaInN LED structures — •Silke Wolter, Fedor Alexej Ketzer, Heiko Bremers, Torsten Langer, Uwe Rossow, and Andreas Hangleiter
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14:00 |
HL 96.9 |
The contribution has been withdrawn.
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14:00 |
HL 96.10 |
Effects of rapid thermal annealing on the disorder and composition of Ga(N,As,P) quantum wells on silicon for laser application — •Sebastian Gies, Sarah Karrenberg, Martin Zimprich, Tatjana Wegele, Andreas Beyer, Wolfgang Stolz, Kerstin Volz, and Wolfram Heimbrodt
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14:00 |
HL 96.11 |
Type-II Excitons in (Ga,In)As/Ga(N,As)-quantum wells on GaAs — •Carsten Kruska, Sebastian Gies, Philip Hens, Wolfgang Stolz, Kerstin Volz, and Wolfram Heimbrodt
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14:00 |
HL 96.12 |
Study of Optical Emission Properties of InGaN Quantum Wells on Semipolar (20-21) and (20-2-1) orientations — •Nikolay Ledentsov Jr., Ingrid Koslow, Christian Mounir, Tim Wernicke, Tore Niermann, Ulrich T. Schwarz, Markus Weyers, and Michael Kneissl
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14:00 |
HL 96.13 |
Spectroscopic characterization of Lanthanide-doped AlN and AlInN — •Sebastian Bauer, Miao Yang, Niklas Bayrle, Murat Yildirim, Matthias Hocker, Horst P. Strunk, and Klaus Thonke
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14:00 |
HL 96.14 |
Combined and spatially correlated measurements by SEM-CL and EBIC on semiconductor microstructures — •Manuel Knab, Matthias Hocker, Ingo Tischer, Pascal Maier, Junjun Wang, Ferdinand Scholz, and Klaus Thonke
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14:00 |
HL 96.15 |
GaN quantum dot ensembles for capacitance-voltage measurements — •Carlo A. Sgroi, Arne Ludwig, and Andreas D. Wieck
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14:00 |
HL 96.16 |
Achieving step flow AlN growth by MOVPE — •Konrad Bellmann, Tim Wernicke, Markus Pristovsek, Frank Mehnke, Christian Kuhn, and Michael Kneissl
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14:00 |
HL 96.17 |
Experimental verification of electron scattering simulations for depth-resolved cathodoluminescnece — •Matthias Hocker, Pascal Maier, Ingo Tischer, Oliver Rettig, Robert A.R. Leute, Kamran Forghani, Ferdinand Scholz, and Klaus Thonke
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14:00 |
HL 96.18 |
Photoluminescence of Si-doped AlxGa1−xN with aluminum mole fractions beyond 80% — •Dimitri Henning, Christoph Reich, Frank Mehnke, Tim Wernicke, Christian Kuhn, Harald Pingel, and Michael Kneissl
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14:00 |
HL 96.19 |
Non-Classical Light Emission From GaN Quantum Wires — S. Kalinowski, G. Callsen, J. Teubert, J. Arbiol, P. Becker, G. Hönig, D. Bostanjoglo, •A. Bokov, A. Schliwa, M. Eickhoff, and A. Hoffmann
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14:00 |
HL 96.20 |
External Pressure on GaN/GaInN Quantum Wells: Influence of Strain on Internal Fields — •Hendrik Kuhn, Torsten Langer, Jens Hübner, Andreas Hangleiter, and Michael Oestreich
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14:00 |
HL 96.21 |
Optimization of Ohmic contacts of GaN HEMTs with AlN spacer — •Teresa Baur, Sebastian Mansfeld, Helmut Jung, Manfred Madel, Hervé Blanck, Jan Grünenpütt, Bernd Schauwecker, and Klaus Thonke
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14:00 |
HL 96.22 |
Strain and surface morphology in AlGaN-based UV-C laser heterostructures — •F. Krueger, C. Kuhn, F. Mehnke, M. Martens, P. Schneider, V. Kueller, J. Park, A. Knauer, J. Rass, T. Wernicke, M. Weyers, M. Lehmann, and M. Kneissl
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14:00 |
HL 96.23 |
C-doped GaN buffer layers with CBr4, C3H8 and Fe-doped GaN for breakdown voltage enhancement of HEMTs — •Andreas Lesnik, Jonas Hennig, Armin Dadgar, Jürgen Bläsing, Hartmut Witte, and Andrè Strittmatter
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