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HL: Fachverband Halbleiterphysik

HL 98: Nitrides: Bulk material, films, surfaces and quantum wells

HL 98.3: Vortrag

Freitag, 20. März 2015, 10:00–10:15, EW 201

Ultrafast to slow time-resolved defect luminescence studies of rare earth doped AlN — •Tristan Koppe¹, Oliver Beck¹, Takashi Taniguchi², Hans Hofsäss¹, and Ulrich Vetter¹ — ¹2. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen — ²National Institute for Materials Science, Namiki 1 - 1, Tsukuba, Ibaraki 305-0044, Japan

We report on studies of fast and slow defect luminescence processes in undoped and rare earth doped AlN. It was synthesized by the temperature gradient method in a belt-type HP-HT apparatus using e.g. Li₃AlN₂ as solvent which was then mixed with EuF₃ before synthesis for rare earth doped AlN.

In this work a general overview is given on the known defect types in AlN reported in literature so far, and the interaction of defects and rare earth ions in the host are discussed based on luminescence studies. Time-resolved luminescence studies were performed using a Coherent MIRA 900-F Ti:Sa laser in combination, a pulse picker and an APG HarmoniXX FHG 3+1 harmonics generator with the luminescence light collected with a 0.3 m spectrograph and a streak camera.

Two distinct luminescence bands at 2.7 eV and 3.9 eV in undoped AlN with lifetimes in the range from several ps to several µs are found and their origin is discussed. In rare earth doped AlN energy transfer between rare earth ion and defects in the AlN host is discussed based on temperature dependent time-resolved luminescence measurements.