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09:30 |
HL 98.1 |
Valence band tomography in wurtzite GaN — •Martin Feneberg, Karsten Lange, Michael Winkler, Matthias Wieneke, Hartmut Witte, Jürgen Bläsing, Armin Dadgar, and Rüdiger Goldhahn
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09:45 |
HL 98.2 |
Interaction of GaN(0001) surfaces with potassium and water — •Marcel Himmerlich, Vladimir Irkha, Anja Eisenhardt, Stephanie Reiss, and Stefan Krischok
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10:00 |
HL 98.3 |
Ultrafast to slow time-resolved defect luminescence studies of rare earth doped AlN — •Tristan Koppe, Oliver Beck, Takashi Taniguchi, Hans Hofsäss, and Ulrich Vetter
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10:15 |
HL 98.4 |
Aberration-corrected-STEM investigation of epitaxial GaN thin films formed by ion-beam based post-nitridation of Ga droplets — •David Poppitz, Andriy Lotnyk, Jürgen W. Gerlach, and Bernd Rauschenbach
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10:30 |
HL 98.5 |
Towards an understanding of (1122) InGaN quantum wells — •Markus Pristovsek, Tongtong Zhu, Yisong Han, and Colin J. Humphreys
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10:45 |
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Coffee break
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11:00 |
HL 98.6 |
Growth and characterization of InN on Si (111) by molecular beam epitaxy — •Saskia Weiszer, Andreas Zeidler, Fabian Schuster, and Martin Stutzmann
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11:15 |
HL 98.7 |
Molecular beam epitaxy of GaN quantum dots — •Christopher Hein, Andreas Kraus, Heiko Bremers, Fedor Alexej Ketzer, Kamran Forghani, Uwe Rossow, Ferdinand Scholz, and Andreas Hangleiter
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11:30 |
HL 98.8 |
Investigation of the optical properties of Zn doped GaN/AlGaN quantum wells for future single photon applications — •Johannes Dühn, Matin Mohajerani, Xue Wang, Andreas Waag, Kathrin Sebald, and Jürgen Gutowski
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11:45 |
HL 98.9 |
Optical investigations of anisotropic strain of nonpolar GaInN quantum wells grown on AlInN/GaN buffer layers — •Fedor Alexej Ketzer, Ernst Ronald Buss, Philipp Horenburg, Holger Jönen, Heiko Bremers, Torsten Langer, Uwe Rossow, and Andreas Hangleiter
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12:00 |
HL 98.10 |
Photoluminescence of GaN grown by high temperature vapor phase epitaxy — •Friederike Zimmermann, Jan Beyer, Gleb Lukin, Olf Pätzold, Christian Röder, Michael Stelter, and Johannes Heitmann
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12:15 |
HL 98.11 |
Influence of off-cut on the surface morphology and defect distribution of epitaxial laterally overgrown (ELO)-AlN — •Johannes Enslin, Frank Mehnke, Tim Wernicke, Konrad Bellmann, Arne Knauer, Viola Kueller, Anna Mogilatenko, Markus Weyers, and Michael Kneissl
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