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KR: Fachgruppe Kristallographie

KR 1: Symposium on Ferroic Domain walls (SYDW)

KR 1.4: Invited Talk

Monday, March 16, 2015, 11:30–12:00, H 0105

Novel materials at domain walls — •Beatriz Noheda — Zernike Institute for Advanced Materials, Groningen, The Netherlands

There is a growing need to control and improve the physical responses of useful electronic materials, as well as to induce additional functionalities of significance for applications. Domain wall nanoelectronics has been proposed as a suitable route to achieve such control at the smallest scales. Addressing the domain wall functionalities, in particular those of ferroelastic domain walls, we take advantage not only the intrinsic symmetry breaking that takes place at the wall but also of the strain gradients that are associated to these walls. The possibility to generate periodic arrays of domain walls by self-assembly during epitaxial growth is an added benefit. I will show that, depending of the chosen thin film material, the local stresses that develop locally around ferroelastic domain walls can either trigger local electrochemistry or give rise to atomic arrangements that cannot be obtained by other existing routes, generating novel 2D materials with distinct nanoscale functionalities.

The works presented here are in collaboration with S. Farokhipoor, C.J.M. Daumont, D. Rubi, C. Magén, E. Snoeck, S. Venkatesan, A. Müller, M. Döblinger, C. Scheu, J. Íñiguez, M. Mostovoy and C. de Graaf.