Berlin 2015 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
MA: Fachverband Magnetismus
MA 19: POSTER Ia
MA 19.21: Poster
Dienstag, 17. März 2015, 09:30–13:00, Poster A
Magnetism and defects in V-doped TiO2 — •Alevtina Smekhova1,2, Roman Baulin2, Oguz Yildirim3, Maik Butterling3, Steffen Cornelius3, Andrei Novikov2, Anna Semisalova2, Andrei Orlov4, Elena Ganshina2, Nikolai Perov2, Wolfgang Anwand3, Andreas Wagner3, Kay Potzger3, and Alexander Granovsky2 — 1Universität of Duisburg-Essen und CENIDE, Duisburg, Germany — 2Lomonosov Moscow State University, Moscow, Russia — 3Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden, Germany — 4Federal State Research and Design Institute of Rare Metal Industry, Moscow, Russia
The idea about defect-induced ferromagnetic long-range order at RT in some semiconducting materials is not new, but still needs to be further proved. In the case of TiO2 doped by 3d transition atoms the most interesting situation within this thought is with doping by Vanadium. Recently we found that in 1at% and 3at% V-doped TiO2 thin films prepared by magnetron sputtering the saturation magnetization correlates well with an amount of negatively charged defects estimated by Doppler-Broadening technique of Positron Annihilation Spectroscopy (PAS) and only slightly depends on the film conductivity. Meanwhile the MO spectroscopy showed a principal difference between these two doping levels and strong dependence on film resistivity. So, negatively charged defects and free carriers have to be taken into account separately from each other for the explanation of RT ferromagnetism in titanium dioxide films. Support by a German-Russian joint research group HRJRG-314 & RFBR 12-02-91321-SIGa is acknowledged.