Berlin 2015 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 19: POSTER Ia
MA 19.53: Poster
Dienstag, 17. März 2015, 09:30–13:00, Poster A
Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions — •Savio Fabretti1, Robert Zierold2, Kornelius Nielsch2, Carmen Voigt3, Carsten Ronning3, Patrick Peretzki3, Michael Seibt4, and Andy Thomas1,5 — 1Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Germany — 2Institute of Nanostructure and Solid State Physics, Universität Hamburg, 20355 Hamburg, Germany — 3Institute for Solid State Physics, Friedrich-Schiller-University Jena, 07743 Jena, Germany — 44. Physikalisches Institut, Georg-August University Göttingen, 37077 Göttingen — 5Institut für Physik, Johannes Gutenberg Universität Mainz, 55128 Mainz, Germany
Magnetic tunnel junctions with HfO2 tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. The atomic layer deposition leading to a polycrystalline electrode-barrier system revealed by high-resolution transmission electron microscopy. We investigated the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amourphous electrode-barrier system via high-resolution transmission electron microscopy [1].
[1] Fabretti et al., APL 105, 132405 (2014) doi: 10.1063/1.4896994