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MA: Fachverband Magnetismus
MA 7: Magnetic Semiconductors
MA 7.2: Talk
Monday, March 16, 2015, 11:45–12:00, EB 202
carbon p electron ferromagnetism in silicon carbide — •yutian wang1,5, yu liu1,2, gang wang2, wolfgang anwand3, catherine A jenkins4, elke arenholz4, frans munnik1, ovidiu d gordan6, dietrich r. t. zahn6, xiaolong chen2, sibylle gemming1,6, manfred helm1,5, and shengqiang zhou1 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany — 2Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China — 3Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany — 4Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA — 5Technische Universität Dresden, 01062 Dresden, Germany — 6Institute of Physics, Technische Universität Chemnitz , 09107 Chemnitz, Germany
Defect induced ferromagnetism has been reported in wide-bandgap semiconductors as well as in carbon-based materials. It is desirable to establish a direct relation between such ferromagnetism and defects. Here, we succeed to reveal the origin of defect-induced ferromagnetism using SiC by X-ray magnetic circular dichroism (XMCD). In combination with first-principles calculations. We show that the long-range ferromagnetic coupling is due to the p electrons of the nearest-neighbor carbon atoms around VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic, electronic origin.