Berlin 2015 – wissenschaftliches Programm
MM 28.12: Poster
Dienstag, 17. März 2015, 18:30–20:30, Poster E
Nanoporous Germanium-Silicon alloys by ion irradiation at low energies — •Fritz Lehnert1 and Stefan G. Mayr1,2,3 — 1Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM) — 2ranslationszentrum für regenerative Medizin (TRM) Leipzig — 3Fakultät für Physik und Geowissenschaften, Universität Leipzig
Nanoporous materials exhibit a very large surface area compared to their volume and are therefore an interesting material class for all surface active processes such as catalysis membranes or gas adsorption storage applications. While the influence of ion radiation on single-crystal germanium as a semiconductor material, has been studied in the past decades, the effects on their alloys remains yet uninvestigated. Therefore the development of a nanoporous surface layer during ion bombardment of germanium-silicon-alloys was studied in detail experimentally. Amorphous germanium-silicon thin films produced by electron beam evaporation were irradiated with low energy 30 keV Ga-ions using a focued ion beam. The surface morphology and topography was investigated by SEM and AFM measurements. The nano-structure development was found to depend strongly on the silicon-to-germanium ratio. The investigation of semiconductor alloys is expected to lead to a better understanding of the processes involved in the development of a nanoporous structure by ion bombardment.
 S. G. Mayr and R. S. Averback, Phys. Rev. B 71 (2005) 134102.