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MM: Fachverband Metall- und Materialphysik

MM 28: Poster Session II

MM 28.22: Poster

Dienstag, 17. März 2015, 18:30–20:30, Poster E

Electronic states at SnO/SnO₂ heterointerfaces — •Arwa Abdullah Albar, H. A. Tahini, and U. Schwingenschlögl — King Abdullah University of Science and Technology, Thuwal , Saudi Arabia

Device applications of transparent conducting oxides require a thorough understanding of the physical and chemical properties of the involved interfaces. We use ab-initio calculations within density functional theory to investigate the electronic states at the SnO/SnO₂ heterointerface. Tin dioxide and monoxide are transparent materials with high n-type and p-type mobilities, respectively. This work aims at exploring the modifications of the electronic states, in particular the charge transfer, in the vicinity of the heterointerface. The (110) interface is modeled by a supercell approach in order to minimize the mismatch between the lattice parameters of the two compounds. We discuss the electronic density of states as a function of the distance to the interface.