Berlin 2015 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 33: Graphene
O 33.1: Poster
Dienstag, 17. März 2015, 18:15–21:00, Poster A
Facile Electrochemical Transfer of Single Crystal Epitaxial Graphene from Ir(111) — Line Koefoed2, •Antonija Grubišić Čabo1, Mikkel Kongsfelt2, Søren Ulstrup1, Andrew Cassidy1, Patrick R. Whelan3, Marco Bianchi1, Maciej Dendzik1, Filippo Pizzocchero3, Bjarke Jørgensen4, Peter Bøggild3, Liv Hornekaer1, Philip Hofmann1, Steen U. Pedersen2, and Kim Daasbjerg2 — 1Department of Physics and Astronomy and Interdisciplinary Nanoscience Center, University of Aarhus, Ny Munkegade 120, 8000 Aarhus C, Denmark — 2Department of Chemistry and Interdisciplinary Nanoscience Center, University of Aarhus, Langelandsgade 140, 8000 Aarhus C, Denmark — 3Department of Micro- and Nanotechnology, Technical University of Denmark, 2800 Kongens Lyngby, Denmark — 4Newtec A/S, Staermosegårdsvej 18, 5230 Odense M, Denmark
We present an electrochemical method for the transfer of large-area, high-quality single crystalline graphene from Ir(111) to SiO2/Si under ambient conditions. The method is based on intercalation of tetraoctylammonium ions between the graphene layer and the Ir surface. This simple technique allows transfer of graphene single crystals having the same size as the substrate they are grown on (diameter ≈ 8 mm). In addition, the substrate can be re-used for further growth cycles. A detailed Raman map analysis of the transferred graphene reveals that the initial characteristics and imprints left on the sheet of graphene in terms of strain and wrinkles from the growth process remain after transfer.