Parts | Days | Selection | Search | Updates | Downloads | Help
O: Fachverband Oberflächenphysik
O 35: Nanostructures at Surfaces
O 35.4: Poster
Tuesday, March 17, 2015, 18:15–21:00, Poster A
Fabrication and characterization of silicon nanoparticles embedded in amorphous atomic layer deposited Al2O3 — •Klemens Ilse1, Johannes Ziegler1, Alexander Sprafke1, and Ralf Wehrspohn1,2 — 1Department of Physics, Martin-Luther University Halle-Wittenberg, Halle (Saale), 06120, Germany — 2Fraunhofer Institute for Mechanics of Materials IWM, Halle (Saale), 06120, Germany
Due to their promising material properties and opportunities for integration into silicon planar technologies, silicon nanoparticles are subject of high interest for next-generation applications in microelectronics, photonics, photovoltaic, or nanobiotech industries. Common silicon nanoparticle fabrication techniques, such as ion implantation, magnetron sputtering or the superlattice approach include annealing steps with temperatures above 1000°C to enable formation and crystallisation of silicon nanoparticles. Typically, the obtained silicon nanocrystals are embedded in a matrix consisting of silicon dioxide or silicon nitride.
In this work, silicon nanoparticles were fabricated by low-pressure non-thermal plasma-processes and embedded in amorphous aluminium oxide produced by atomic layer deposition (ALD). Both processes were performed in a single reactor without any vacuum break in between and in a low temperature regime.
Here, characterization results concerning the crystallinity, photoluminescence, material composition, and particle size of the embedded silicon nanoparticles are presented and discussed.