Berlin 2015 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 80: Graphene: Structure
O 80.10: Vortrag
Donnerstag, 19. März 2015, 12:45–13:00, MA 041
Plasma-enhanced chemical vapor deposition of graphene on metallic substrates — •Nicolas Wöhrl1, Oliver Ochedowski2, Steven Gottlieb2, Stephan Schulz1, and Volker Buck2 — 1Faculty of Chemistry and CENIDE, University Duisburg-Essen, 47057 Duisburg, Germany — 2Faculty of Physics and CENIDE, University Duisburg Essen, 47057 Duisburg, Germany
In this work we present the synthesis of graphene on copper and nickel substrates by microwave Plasma-enhanced Chemical Vapor Deposition (PE-CVD) process. The special construction of the plasma source allows the deposition at a wide range of different process parameters giving a fast and inexpensive method to synthesize graphene. Additional advantages of the plasma deposition of graphene are lower substrate temperatures compared with thermal CVD processes. In contrast to the thermal CVD the gaseous precursors are already decomposed in the plasma and the plasma parameters are varied to investigate the influence on the nucleation and growth of graphene and on the defect density in the graphene layers. Optical emission spectroscopy is used to characterize the plasma properties while Raman spectroscopy and AFM measurements are used as nondestructive tools for the characterization of the synthesized graphene films. Especially Raman spectroscopy is used as a suitable tool to determine the number of graphene layers, the disorder and the defect density. We present a possible way to produce large area of monolayer graphene on metallic substrates with the prospect to make graphene available for industrial applications.