Berlin 2015 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 99: Semiconductor Substrates: Structure, Epitaxy and Growth
O 99.6: Vortrag
Freitag, 20. März 2015, 11:45–12:00, MA 042
Comparative study of Co and Ni germanides growth on Ge(001) substrates — •Tomasz Grzela1, Wojciech Koczorowski2, Giovanni Capellini1,3, Ryszard Czajka2, Neil Curson4,5, and Thomas Schroeder1,6 — 1IHP, Im Technologiepark 25, Frankfurt (Oder), 15236, Germany — 2Institute of Physics, PUT, Piotrowo 3, Poznan, Poland — 3Dipartimento di Scienze, Università degli Studi Roma Tre, Roma, Italy — 4London Centre for Nanotechnology, UCL, London, UK — 5Department of Electronic and Electrical Engineering, UCL, London, UK — 6BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus
Extending the performance of existing Si microelectronics beyond the limits faced by either miniaturization ("More Moore") or available functions ("More than Moore") requires the integration of new materials. Germanium, due to its superior physical properties with respect to Si in terms of optoelectronics and its CMOS processing compatibility, is one of the most promising materials to further develop the existing Si platform. However, there are challenges to the formation of low resistance metallic contacts to Ge. Different metal/Ge systems present promising electrical properties, but given wide-spread use in Si CMOS technologies in form of their respective silicides-, cobalt- and nickel- germanides are of special importance. In this contribution we focus our attention on the systematic and comparative growth studies of Co- and Ni- germanides on Ge(001) substrates, by means of STM technique. In addition, other measurement technique like TEM-EDX, XPS and LEED were applied to corroborate these STM results.