Berlin 2015 – wissenschaftliches Programm
TT 102.2: Vortrag
Donnerstag, 19. März 2015, 15:15–15:30, A 053
Tunable weak anti-localization in InAs nanowire device — •Libin Wang1, Jingkun Guo1, Sen Li1, Ning Kang1, Dong Pan2, Jianhua Zhao2, and Hongqi Xu1 — 1Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China — 2Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
III-V semiconductor nanowire had attracted much attention as a possible building block for future electronic systems because of its high performance and possibility of gate voltage manipulation of electron spins. InAs nanowires are particularly attractive due to its strong spin-orbit interaction. We report the fabrication and magnetotransport measurement of individual InAs nanowires with diameter of 40 nm on a SiO2/Si substrate with a globe back gate. The observed magnetoresistance at low temperature can be used to estimate the characteristic phase coherence length and the spin-orbit scattering length. We observe a crossover between weak anti-localization and weak localization with the change of temperature and applied electric field. Our results give information on the fundamental spin relaxation and quantum coherence effect of InAs nanowire.