Berlin 2015 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 105: Quantum Information Systems: Si Vacancies and NV Centers (jointly with HL)

TT 105.4: Vortrag

Donnerstag, 19. März 2015, 15:45–16:00, ER 164

Charge state control of nitrogen-vacancy centers in diamond — •Patrick Simon¹, Moritz V. Hauf¹, Ankit Rathi¹, Philipp Neumann², Helmut Fedder², Jörg Wrachtrup², Friedemann Reinhard^1,2, and Jose A. Garrido¹ — ¹Walter Schottky Institut, Physik-Department,Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany — ²3. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany

The nitrogen-vacancy (NV) defect in diamond is a promising candidate for quantum information processing or sensing purposes. In most applications reliable control of the charge state of the NV is of utmost importance.

In this work we demonstrate that the charge state of NV centers can be controlled using an in-plane gated diamond nanostructure based on selective surface termination. Applying a gate voltage changes the band bending at the hydrogen terminated diamond surface such that reversible charge state switching is enabled. We observed full control of NVs from a non-fluorescent state, potentially NV⁺, across NV⁰ to NV⁻