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Berlin 2015 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 41: Spintronics: Excitons and Local Spins (jointly with HL, MA)

TT 41.3: Vortrag

Dienstag, 17. März 2015, 10:00–10:15, ER 270

Coherent control and readout of single spins in silicon carbide — •Matthias Widmann1, Sang-Yun Lee1, Torsten Rendler1, Nguyen Tien-Son2, Helmut Fedder1, Erik Janzén2, and Jörg Wrachtrup113.Physikalisches Institut, Universität Stuttgart — 2Department of Physics, Chemistry and Biology, Linköping University

Single spin manipulation is one of the main subjects in research not only for quantum information processing (QIP) but also for quantum metrology. Having isolated spins in solids has advantages of stability and fabrication. Deep level defects in diamond and impurity donors in silicon have been considered as promising candidates and several key steps towards QIP have been achieved. However, there exist disadvantages which have hindered their successful integration into modern electronic devices; cryogenic temperature mandatory for readout of spins in silicon, and difficulty in electrical initialization and readout in diamond. These motivate to investigate other host materials such as silicon carbide (SiC). SiC combines the advantages of silicon and diamond, because electrical detection and optical access of spin ensembles at room temperature (RT) is possible, and it also benefits from modern fabrication techniques. Addressing individual spin states have not been shown yet, however, is highly demanded to set up a base for scalable atomic-scale quantum technologies. By presenting coherent control and readout of single spins in SiC at RT we prove that SiC is a promising platform for the scalable spintronic devices [1]. [1] M. Widmann et al., Coherent control of single spins in silicon carbide at room temperature, to be published in Nature Materials.

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