Berlin 2015 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 50: Graphene (organized by O)

TT 50.4: Poster

Dienstag, 17. März 2015, 18:15–21:00, Poster A

Magnetotransport of epitaxial Graphene with single ion-implanted Boron, Nitrogen and Carbon atomsPhilip Willke1, •Anna Sinterhauf1, Sangeeta Thakur3, Julian A. Amani2, Thomas Kotzott1, Steffen Weikert2, Kalobaran Maiti3, Hans Hofsäss2, and Martin Wenderoth11IV. Physikalisches Institut, Universität Göttingen, Germany — 2II. Physikalisches Institut, Universität Göttingen, Germany — 3Department of Condensed Matter Physics and Materials’ Science, TIFR, Mumbai, India

Using magnetotransport (MR) experiments we investigate the transport properties of SiC-Graphene in combination with low-energy ion implantation. Here, we demonstrate the incorporation of single boron, nitrogen and carbon atoms for which the microscopic structure has been additionally studied by scanning tunneling microscopy [1]. The ion-implanted samples exhibit a higher resistance and a lower mobility than undoped samples. Additionally, we find a positive MR for undoped samples switching to a negative MR for doped samples at high magnetic fields, especially for 11B+- and 12C+-ions. We explain this behavior with the additional presence of localized scattering centers which we describe in the context of weak localization theory. This work was supported by DFG priority program 1459 ”Graphene”.

[1] P. Willke et al., Appl. Phys. Lett. 105, 111605 (2014)

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