Berlin 2015 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

TT: Fachverband Tiefe Temperaturen

TT 67: Correlated Electrons: f-Electron Systems

TT 67.2: Vortrag

Mittwoch, 18. März 2015, 15:15–15:30, H 3005

GdRh2Si2: Single crystal growth and characterization — •Kristin Kliemt and Cornelius Krellner — Physikalisches Institut, Goethe Universität Frankfurt, 60438 Frankfurt am Main, Germany

Among the ternary silicides of the type RT2Si2 (R = rare earth, T = transition metal) which crystallize in the bodycentered tetragonal ThCr2Si2 structure, GdRh2Si2 has attracted much attention in the last decades [1,2] as it belongs to the compounds with rare earth elements with exceptional magnetic properties e.g. CeRh2Si2, YbRh2Si2 and EuRh2Si2. Single crystals of GdRh2Si2 were grown for the first time by a modified Bridgman method from indium flux.

We report on the growth procedure and show the results of specific heat, magnetic and electrical transport measurements on the single crystals. The high quality of the crystals was proved by Laue X-ray scattering, X-ray powder diffraction, EDX microprobe analysis and resistivity measurements.

[1] I. Felner, I. Nowik, Solid State Commun. 47, 831 (1983).

[2] G.A. Cabrera-Pasca et al.,

J. Phys. Condens. Matter 24, 416002 (2012).

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2015 > Berlin