Berlin 2015 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 77: Topological Insulators: Structure and Electronic Structure (jointly with HL, DS, MA, O)
TT 77.1: Vortrag
Mittwoch, 18. März 2015, 15:00–15:15, ER 270
New electron states at the Bi/InAs(111) interface — K Hricovini1,2, J-M Mariot3, •L Nicolaï1,2,7, U Djukic1, M C Richter1,2, O Heckmann1,2, T Balasubramanian4, M Leandersson4, J Sadowski4, J Denlinger5, I Vobornik6, J Braun7, H Ebert7, and J Minár7,8 — 1LPMS, UCP,Cergy, France — 2DSM-IRAMIS, SPEC, CEA-Saclay, France — 3LCP-MR, UPMC Univ. Paris 06/CNRS, France — 4MAX-lab, Lund Univ., Sweden — 5ALS, Berkeley, USA — 6EST, Trieste, Italy — 7LMU Münich, Germany — 8Univ. of West Bohemia, Plzeň, Czech Republic
The Bi(111) surface is a prototype system to study Rashba-split surface states. Theoretical studies [1] predicted non-trivial topological surface states appearing on a single bi-layer of Bi(111) and a more complex behaviour was suggested for a variable film thickness as a function of layer thickness [2]. This clearly indicates that the electronic properties of thin films of this material are far from being understood. Here we present combined theoretical and ARPES studies of the electronic structure of Bi(111) films grown on InAs(111). Bi growth is epitaxial and a monocrystal of very high quality is obtained after depositing several monolayers. The ARPES experiments on these samples show several new types of electronic states. It is shown that a part of these new states corresponds to novel bulk-like features. These features are well reproduced by the one-step model of photoemission as implemented in the SPR-KKR package [3].[1] M. Wada et al., Phys. Rev. B 83, 121310 (2011). [2] Z. Liu et al., Phys. Rev. Lett. 107, 136805 (2011). [3] H. Ebert, D. Ködderitzsch, J. Minár, Rep. Prog. Phys. 74, 096501 (2011).