Berlin 2015 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 80: 2D Materials Beyond Graphene: TMDCs, Silicene and Relatives (organized by O)

TT 80.4: Vortrag

Mittwoch, 18. März 2015, 16:00–16:15, MA 005

The electronic band structure of MoS₂ investigated by ARPES — •Mathias Gehlmann¹, Sven Döring¹, Markus Eschbach¹, Ewa Mlynczak¹, Irene Aguilera², Gustav Bihlmayer², Stefan Blügel², Lukasz Plucinski¹, and Claus M. Schneider¹ — ¹PGI-6, FZ-Jülich — ²PGI-1/IAS-1, FZ-Jülich

MoS₂ belongs to transition metal dichalcogenides and has drawn a large amount of attention in recent years. While the main area of interest in this material lies in the possibility of integrating it into two dimensional semiconductors and transistor devices, a growing number of researchers focuses on the valley polarization at the edge of the Brillouin zone.

We combine angle-resolved photoemission spectroscopy (ARPES) with density functional theory calculations to perform a thorough analysis of the valence band electronic structure of MoS₂. Our focus lies on the splitting of the valence band around the K point at the edge of the Brilluin zone, and on the comparison of the electronic states of the bulk material and its surface to a free standing monolayer.