Berlin 2015 – wissenschaftliches Programm
TT 80.4: Vortrag
Mittwoch, 18. März 2015, 16:00–16:15, MA 005
The electronic band structure of MoS2 investigated by ARPES — •Mathias Gehlmann1, Sven Döring1, Markus Eschbach1, Ewa Mlynczak1, Irene Aguilera2, Gustav Bihlmayer2, Stefan Blügel2, Lukasz Plucinski1, and Claus M. Schneider1 — 1PGI-6, FZ-Jülich — 2PGI-1/IAS-1, FZ-Jülich
MoS2 belongs to transition metal dichalcogenides and has drawn a large amount of attention in recent years. While the main area of interest in this material lies in the possibility of integrating it into two dimensional semiconductors and transistor devices, a growing number of researchers focuses on the valley polarization at the edge of the Brillouin zone.
We combine angle-resolved photoemission spectroscopy (ARPES) with density functional theory calculations to perform a thorough analysis of the valence band electronic structure of MoS2. Our focus lies on the splitting of the valence band around the K point at the edge of the Brilluin zone, and on the comparison of the electronic states of the bulk material and its surface to a free standing monolayer.