Berlin 2015 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 83: Graphene: Adsorption, Intercalation and Doping (organized by O)
TT 83.2: Poster
Mittwoch, 18. März 2015, 18:15–21:00, Poster A
High Energy Ion Irradiation of Graphene — Philipp Ernst1, •Tobias Foller1, Oliver Ochedowski1, Roland Kozubek1, Johannes Hopster1, Jan Weber2, Thorsten Balgar2, and Marika Schleberger1 — 1Fakultät für Physik and CeNIDE, Universität Duisburg-Essen, 47048 Duisburg, Germany — 2Fakultät für Chemie and CeNIDE, Universität Duisburg-Essen, 45117 Duisburg, Germany
In this presentation we show that single high energetic ions can be used as a tool to locally modify the properties of graphene. For this graphene samples are irradiated with swift heavy ions (typical kinetic energies in the rage of 100 MeV) and slow highly charged ions (potential energies up to 45 keV). By combining various analytical techniques like AFM, TEM, and Raman spectroscopy it is shown that depending on the irradiation parameters (ion energy, angle of incidence, choice of substrate for graphene) various modifications like local defective areas, pores in form of origami-like foldings and even doping can be introduced into the graphene sheet. Remarkably graphene field-effect measurements revealed that irradiation with swift heavy ions under perpendicular incidence with small fluences doubles the mobility of holes compared to the unirradiated sample. In contrast to this, irradiation with highly charged ions decrease the mobility. In this case defects are created which are subsequently hydrogenated as strongly suggested by sum frequency generation spectroscopy.