Berlin 2015 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

TT: Fachverband Tiefe Temperaturen

TT 83: Graphene: Adsorption, Intercalation and Doping (organized by O)

TT 83.4: Poster

Mittwoch, 18. März 2015, 18:15–21:00, Poster A

XPS-investigation of the interaction of Lanthanides with epitaxial graphene — •Sarah Roscher, Martina Wanke, and Thomas Seyller — Institut für Physik, TU Chemnitz, Reichenhainer Sraße 70, D-09126 Chemnitz, Germany

Large-scale epitaxial graphene on silicon carbide is promising for electronic applications. Recently, interface engineering by intercalation of various elements underneath the buffer layer has been studied by several groups and it was demonstrated that elements of the Lanthanides are able to intercalate through epitaxial graphene [1-3]. In this study, erbium was deposited onto different graphene layers epitaxially grown on SiC(0001) and subsequently annealed in a temperature range of 300-950°C. X-ray photoelectron spectroscopy (XPS) was employed to determine the chemical composition of the sample, the intercalation, and the amount of doping. The XPS data indicate that subsequent heating to 850°C results in partial intercalation of the buffer layer. Because of erbium's high reactivity the influence of oxygen on the sample preparation demanded particular attention.

[1] S. Schumacher et al., Nano Lett. 13 (2013) 5013.

[2] S. Watcharinyanon et al., Graphene 2 (2013) 66.

[3] L. Huang et al., Appl. Phys. Lett. 99 (2011) 163107.