Berlin 2015 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
TT: Fachverband Tiefe Temperaturen
TT 9: Transport: Spintronics and Magnetotransport (jointly with HL, MA)
TT 9.9: Vortrag
Montag, 16. März 2015, 11:45–12:00, A 053
Use of resonant tunneling in spin transfer torque magnetic tunnel junctions — •Bhaskaran Muralidharan1, Niladri Chatterji2, and Ashwin Tulapurkar1 — 1Department of Electrical Engineering, IIT Bombay, Powai, Mumbai-400076, India — 2Department of Physics, IIT Bombay, Powai, Mumbai- 400076, India
We propose a novel device that uses resonant tunneling to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet [1]. We employ the non-equilibrium Green’s function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation to demonstrate that the physics of resonant tunneling leads to improved tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Using this framework, we also demonstrate a novel spin torque oscillator design at zero applied magnetic field, by simply engineering parallel and perpendicular spin torques.
[1] N. Chatterji, A. A. Tulapurkar and B. Muralidharan,
ArXiv: 1411.6454, (2014).