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Berlin 2015 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 92: Topological Insulators I (jointly with MA, DS, HL, O)

TT 92.5: Vortrag

Donnerstag, 19. März 2015, 10:30–10:45, EB 202

Atomic relaxations in Bi2Se3 (0001)Sumalay Roy1, •Holger L. Meyerheim1, Katayoon Mohseni1, Arthur Ernst1, Mikhail Otrokov2,3, Maia G. Vergniory1,2, Gregor Mussler4, Christian Tusche1, Evgueni Chulkov2,3, and Jürgen Kirschner1,51MPI f. Mikrostrukturphysik, D-06120 Halle, Germany — 2DIPC, San Sebastian, Spain — 3Tomsk St. Univ. , Russia — 4FZ Jülich, Germany — 5MLU Halle-Wittenberg, Germany

Surface x-ray diffraction analysis of the Bi2Se3(0001) surface reveals an expansion of the top Se-Bi interlayer spacing in the range between 2 and 17% relative to the bulk. It is directly related to the concentration of surface contaminants like carbon and is observed in both, single crystals and MBE grown ultrathin films. Deeper layers and the first van der Waals gap remain unrelaxed. Ab-initio calculations which are in agreement with angular resolved photoemission experiments reveal that carbon acts as an n-dopant, while the top layer expansion induces a shift of the Dirac point towards the bulk conduction band of Bi2Se3 [1,2].

[1] S. Roy, H.L. Meyerheim, A. Ernst et al., PRL 113, 116802 (2014);

[2] S. Roy, H.L. Meyerheim, K. Mohseni et al., PRB 90, 155456 (2014)

This work is supported by SPP1666 (Topological Insulators) of the DFG.

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