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TT: Fachverband Tiefe Temperaturen
TT 92: Topological Insulators I (jointly with MA, DS, HL, O)
TT 92.8: Vortrag
Donnerstag, 19. März 2015, 11:15–11:30, EB 202
Fe-induced stress on Bi2Se3(0001) — •Kenia Novakoski Fischer, Safia Ouazi, Dirk Sander, and Jürgen Kirschner — Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle
The topological insulator Bi2Se3 has attracted intense research activity since its discovery 5 years ago [1]. Here we present the first experimental study of the stress change induced by sub-monolayer deposition of Fe on Bi2Se3. Deposition of 0.2 ML Fe at 300 K induces a stress change of -2.3 N/m. On the contrary, deposition of Fe at 150 K leads to negligible stress change of less than -0.2 N/m. The growth of Fe at 473 K induces a stress of -3.4 N/m. LEED reveals that the hexagonal diffraction pattern of the substrate gets blurred for deposition at 150 K, whereas deposition at higher temperature induces faint diffraction spots indicative of precursor of possible FeSe formation. We discuss these results in view of a recent STM study [2], where the authors suggest thermally activated sub-surface doping of Bi2Se3 by Fe.
[1] H. Zhang, C.X. Liu, X.L. Qi, X. Dai, Z. Fang, and S. C. Zhang, Nat. Phys. 5 (2009) 438; W. Zhang, R. Yu, H.J. Zhang, X. Dai, and Z. Fang, New Journal of Physics 12 (2010) 065013. [2] T. Schlenk, M. Bianchi, M. Koleini, A. Eich, O. Pietzsch, T. O. Wehling, T. Frauenheim, A. Balatsky, J.-L. Mi, B. B. Iversen, J. Wiebe, A. A. Khajetoorians, Ph. Hofmann, and R. Wiesendanger, Phys. Rev. Lett. 110 (2013) 126804