Wuppertal 2015 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 11: Halbleiter: F&E 1
T 11.4: Vortrag
Montag, 9. März 2015, 14:45–15:00, I.12.02 (HS 31)
Investigation of Toshiba 130nm CMOS process as a possible candidate for active silicon sensors in HEP and X-ray experiments — Yunan Fu1, Tomasz Hemperek1, Tetsuichi Kishishita1, Hans Krüger1, Ivan Peric2, •Piotr Rymaszewski1, and Norbert Wermes1 — 1University of Bonn, Bonn, Germany — 2Karlsruhe Institute of Technology, Karlsruhe, Germany
Following the advances of commercial semiconductor manufacturing technologies there has recently been an increased interest within experimental physics community in applying CMOS manufacturing processes to developing active silicon sensors. Possibility of applying high voltage bias combined with high resistivity substrate allows for better depletion of sensor and therefore quicker and more efficient charge collection. One of processes that accommodates those features is Toshiba 130nm CMOS technology (CMOS3E). Within our group a test chip was designed to examine the suitability of this technology for physics experiment (both for HEP and X-ray imaging). Design consisted of 4 pixel matrices with total of 12 different pixel flavors allowing for evaluation of various pixel geometries and architectures in terms of depletion depth, noise performance, charge collection efficiency, etc. During this talk initial outcome of this evaluation will be presented, starting with brief introduction to technology itself, followed by results of TCAD simulations, description of final design and first measurements results.