Wuppertal 2015 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 11: Halbleiter: F&E 1
T 11.6: Vortrag
Montag, 9. März 2015, 15:15–15:30, I.12.02 (HS 31)
Planar pixel sensors in commercial CMOS technologies — •Laura Gonella1, Tomasz Hemperek1, Fabian Hügging1, Hans Krüger1, Anna Macchiolo2, and Norbert Wermes1 — 1Physikalisches Institut der Universität Bonn, Nussallee 12, 53115 Bonn, Germany — 2Max-Planck-Institut für Physik, Föhringer Ring 6, 80805 München, Germany
For the upgrade of the ATLAS experiment at the high luminosity LHC, an all-silicon tracker is foreseen to cope with the increased rate and radiation levels. Pixel and strip detectors will have to cover an area of up to 200m2. To produce modules in high number at reduced costs, new sensor and bonding technologies have to be investigated. Commercial CMOS technologies on high resistive substrates can provide significant advantages in this direction. They offer cost effective, large volume sensor production. In addition to this, production is done on 8" wafers allowing wafer-to-wafer bonding to the electronics, an interconnection technology substantially cheaper than the bump bonding process used for hybrid pixel detectors at the LHC. Both active and passive n-in-p pixel sensor prototypes have been submitted in a 150nm CMOS technology on a 2kΩcm substrate. The passive sensor design will be used to characterize sensor properties and to investigate wafer-to-wafer bonding technologies. This first prototype is made of a matrix of 36 x 16 pixels of size compatible with the FE-I4 readout chip (i.e. 50μm x 250μm). Results from lab characterization of this first submission will be shown together with TCAD simulations. Work towards a full size FE-I4 sensor for wafer-to-wafer bonding will be discussed.