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T: Fachverband Teilchenphysik

T 34: Halbleiter: Test und Auslese 1

T 34.6: Talk

Monday, March 9, 2015, 18:00–18:15, K.12.18 (K3)

Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon — •Christian Scharf, Robert Klanner, and Erika Garutti — Universität Hamburg

Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> orientation are presented. The measurements cover electric field values between 2.5 kV/cm and 50 kV/cm and temperatures between 233 K and 333 K. For both electrons and holes differences of more than 15 % are found between our <100> results and the <111> drift velocities from literature, which are frequently also used for simulating <100> sensors. For electrons, the <100> results agree with previous <100> measurements, however, for holes differences between 5 to 15 % are observed for fields above 10 kV/cm.

Combining our results with published data of low-field mobilities, we derive parameterizations of the drift velocities in high-ohmic <100> silicon for electrons and holes for fields between 0 and 50 kV/cm, and temperatures between 233 and 333 K. In addition, new parameterizations for the drift velocities for electrons and holes are introduced, which provide somewhat better descriptions of existing data for <111> silicon, than the standard parametrization.