Hamburg 2016 – wissenschaftliches Programm

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T: Fachverband Teilchenphysik

T 53: Halbleiterdetektoren III (Strahlenhärte)

T 53.7: Vortrag

Dienstag, 1. März 2016, 18:15–18:30, VMP8 HS

An edge-TCT setup for the investigation of radiation damaged silicon sensors — •Finn Feindt, Christian Scharf, Erika Garutti, and Robert Klanner — Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg, Germany

The aim of this work is to measure the electric field, drift velocity and charge collection of electrons and holes in radiation-damaged silicon strip sensors.

For this purpose the edge Transient Current Technique (TCT) is employed. In contrast to conventional TCT, this method requires light from a sub-ns pulsed, infrared laser to be focused to a µm-size spot and scanned across the polished edge of a strip sensor. Thus electron-hole pairs are generated at a known depth in the sensor. Electrons and holes drift in the electric field and induce transient currents on the sensor electrodes. The current wave forms are analyzed as a function of the applied voltage and the position of the laser focus in order to determine the electric field, the drift velocities and the charge collection.

In this talk the setup and the procedure for polishing the sensor edge are described, and first results, regarding the measurement of the laser light focus are presented.