Hamburg 2016 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 72: Halbleiterdetektoren IV (MAPS, CMOS)
T 72.7: Vortrag
Mittwoch, 2. März 2016, 18:20–18:35, VMP8 HS
Characterization and radiation studies of diode test structures in LFoundry CMOS technology — •Michael Daas1, Laura Gonella1, Tomasz Hemperek1, Fabian Hügging1, Hans Krüger1, Anna Macchiolo2, David-Leon Pohl1, and Norbert Wermes1 — 1Physikalisches Institut der Universität Bonn — 2Max-Planck-Institut für Physik in München
In order to prepare for the High Luminosity upgrade of the LHC, all subdetector systems of the ATLAS experiment will be upgraded. In preparation for this process, different possibilities for new radiation-hard and cost-efficient silicon sensor technologies to be used as part of hybrid pixel detectors in the ATLAS inner tracker are being investigated.
One promising way to optimize the cost-efficiency of silicon-based pixel detectors is to use commercially available CMOS technologies such as the 150 nm process by LFoundry.
In this talk, several CMOS pixel test structures, such as simple diodes and small pixel arrays, that were manufactured in this technology are characterized regarding general performance and radiation hardness and compared to each other as well as to the current ATLAS pixel detector.